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Power Transistors
2SC5913
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT Monitor
15.50.5
(10.0)
Unit: mm
3.20.1 5
(4.5)
3.00.3 5
Features
* High breakdown voltage: VCBO 1 500 V * Wide safe operation area * Built-in dumper diode
26.50.5
(23.4)
(2.0)
5 (4.0) 2.00.2 1.10.1 0.70.1 5.450.3 10.90.5
5.50.3
5 5
Absolute Maximum Ratings TC = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Base current Collector current Peak collector current * Collector power dissipation Ta = 25C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCES VEBO IB IC ICP PC Rating 1 500 1 500 5 3 6 9 40 3 150 -55 to +150 C C Unit V V V A A A W
3.30.3
18.60.5 (2.0) Solder Dip
5
1
2
3
(2.0)
1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package
Internal Connection
C B E
Note) *: Non-repetitive peak collector current
Electrical Characteristics TC = 25C 3C
Parameter Emitter-base voltage (Collector open) Forward voltage Collector-base cutoff current (Emitter open) Symbol VEBO VF ICBO hFE VCE(sat) VBE(sat) fT tstg tf IF = 3 A VCB = 1 000 V, IE = 0 VCB = 1 500 V, IE = 0 Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Storage time Fall time VCE = 5 V, IC = 3 A IC = 3 A, IB = 0.75 A IC = 3 A, IB = 0.75 A VCE = 10 V, IC = 0.1 A, f = 0.5 MHz IC = 3 A, Resistance loaded IB1 = 0.75 A, IB2 = -1.5 A 3 5.0 0.5 5 Conditions IE = 500 mA, IC = 0 Min 5 -2 50 1 10 2.5 1.5 Typ Max Unit V V A mA V V MHz s s
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
22.00.5
(1.2)
Publication date: March 2004
SJD00309AED
1
2SC5913
PC Ta
80
100
Safe operation area
t= 10 ms DC
Safe operation area (Horizontal operation)
10 9
fH = 15.45 kHz, TC < 90C A.S.O for a single pulse load caused by EHT flash over during horizontal operation. One action of the device must not use in all areas. (area A, B and C) But it is able to use in two areas. (area A and B or area B and C)
Collector power dissipation PC (W)
70 60 50 40
(1) TC = Ta (2) With a 100 x 100 x 2 mm Al heat sink (3) Without heat sink
10
ICP IC
t = 100 s
8
Collector current IC (A)
Collector current IC (A)
t= 1 ms
7 6 A 5 4 3 2
1
(1) 30 20 10 (3) 0 0 25 50 75 100 125 150
10-1
10-2
(2)
10-3 1
Non repetitive pulse TC = 25C 10 100 1 000
1 0 0
B
C < 1 mA 1 000 1 500
500
2 000
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Collector-emitter voltage VCE (V)
2
SJD00309AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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